| 发明名称 |
Semiconductor Devices Having Blocking Layers and Methods of Forming the Same |
| 摘要 |
A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection. |
| 申请公布号 |
US2014158964(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313966423 |
申请日期 |
2013.08.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
HAN Jae-Jong;Kang Yoon-Goo;Yoo Won-Seok;Lee Kong-Soo;Lim Han-Jin;Jeong Seong-Hoon |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having first conductivity-type impurities; a lower interconnection on the substrate and having second conductivity-type impurities; a switching device on the lower interconnection; and a first blocking layer between the lower interconnection and the switching device, wherein the first blocking layer includes carbon (C), germanium (Ge), or a combination thereof.
|
| 地址 |
Suwon-si KR |
