METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER

摘要

The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

主权项

1. A semiconductor processing chamber, comprising:
a substrate support; a blocking plate; a gas distribution plate between the substrate support and the blocking plate and coupled to the blocking plate, the gas distribution plate defining a gas mixing volume between the gas distribution plate and the blocking plate and a reaction volume between the gas distribution plate and the substrate support; an RF source; and a switch with a first position that couples the RF source to the gas distribution plate and the blocking plate and a second position that couples the RF source to the gas distribution plate and the substrate support.