IGBT AND CELL STRUCTURE THEREOF, AND METHOD FOR FORMING IGBT

摘要

Disclosed are an insulated gate bipolar transistor (IGBT) and a cell structure thereof, and a method for forming an IGBT. The cell structure of the IGBT comprises: a first drift region (301) and a second drift region (302) located on a lower surface of the first drift region (301), the doping type and concentration of the first drift region (301) and the second drift region (302) being both the same; at least one doped region (303) located between the first drift region (301) and the second drift region (302), the doping type of the doped region (303) being the same as that of the second drift region (302), and the doping concentration of the doped region (303) being greater than that of the second drift region (302); and a collector region (304) located at one side of the second drift region (302) away from the doped region (303), the doping type of the collector region (304) being opposite to the doping type of the second drift region (302). The IGBT structure has a good compromise relationship between conduction loss and switching loss, and relatively high overall performance.