NONVOLATILE MEMORY INCLUDING MEMORY CELL ARRAY HAVING 3-DIMENSIONAL STRUCTURE

摘要

The present invention relates to a nonvolatile memory. A nonvolatile memory of the present invention comprises channel layers and insulating layers which are alternately stacked on a substrate, conductive materials which are extended from the upper part of the channel layers and the insulating layers to an adjacent part of the substrate in a vertical direction to the substrate through a region between channel films of each channel layer, information storage films which are provided between channel films of the channel layers and conductive materials, and bit lines which are connected to each of the channel layers. The conductive materials form a plurality of groups. A distance between the groups is greater than a distance between the conductive materials in each group.