| 摘要 |
A nonvolatile semiconductor memory device and a method for controlling a threshold voltage of dummy cells are provided to minimize a read error due to read disturbance by programming the dummy cells quickly. A memory cell array(1) has dummy cells inside a cell string. The dummy cells have different threshold voltage. A sense amplifier and latch(2) senses and stores the input output data of the memory cell transistors inside the memory cell array. A column decoder(3) selects the bit lines. A low decoder(5) selects the word lines. A high voltage generating circuit(8) generates the voltage higher than the operation power voltage. A control circuit(7) controls the operation of the nonvolatile semiconductor memory device. A dummy cell controller(101) is connected to the control circuit. The dummy cell controller controls the threshold voltage of the dummy cells inside the memory cell array. |
