SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate having a transistor, multiple lower electrodes which are formed on the substrate, a dielectric layer which is formed on the lower electrodes, a first supporting unit, and a second supporting unit, and an upper electrode which is formed on the dielectric layer. The first and the second supporting units are located between the lower electrodes. The first and the second supporting units include a first material and a second material.