| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of crystalLizing a semiconductor film in which a low-temperature processing process is established which permits a low-cost, general-purpose glass to be used as a substrate to be processed, and to provide a substrate with the semiconductor film. SOLUTION: The method is used to crystalize a semiconductor film by applying a laser light to a semiconductor film on a substrate. The semiconductor film is formed on the substrate at 500°C or below by chemical vapor deposition, and it contains hydrogen of 5 atom% or less. COPYRIGHT: (C)2009,JPO&INPIT |
