发明名称 |
METHOD FOR FORMING PATTERNS OF DIFFERENTLY DOPED REGIONS |
摘要 |
The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in fabricating photovoltaic devices. In one aspect, a method of forming a pattern of different doped regions at the same side of a semiconductor substrate comprises providing a patterned doped layer on a surface of the semiconductor substrate at predetermined locations where at least one first doped region is to be formed. The method additionally includes selectively growing at least one second doped region epitaxially at the same side of the semiconductor substrate using the patterned doped layer as an epitaxial growth mask. Furthermore, selectively growing comprises driving dopants from the patterned doped layer into the semiconductor substrate to form the first doped region at the predetermined locations. |
申请公布号 |
EP2740149(A1) |
申请公布日期 |
2014.06.11 |
申请号 |
EP20120750718 |
申请日期 |
2012.08.01 |
申请人 |
IMEC |
发明人 |
RECAMAN PAYO, MARIA;POSTHUMA, NIELS |
分类号 |
H01L21/225;H01L21/02;H01L31/068;H01L31/18 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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