| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for production of a doped zinc oxide thin film, with which the zinc oxide thin film with transparency and low resistance can be obtained without heating at a film manufacturing stage or with heating at 300°C or less even if heated, and to provide a process for production of the doped zinc oxide thin film using the composition. SOLUTION: The composition for forming the zinc oxide thin film contains in its electron-donating organic solvent: an organic zinc compound represented by general formula (1) R<SP>1</SP>-Zn-R<SP>1</SP>(in the formula, R<SP>1</SP>is an alkyl group); and an organic group 3B element compound represented by general formula (2) (in the formula, M is a group 3B element; and R<SP>2</SP>, R<SP>3</SP>and R<SP>4</SP>are independently hydrogen or an alkyl group). A molar ratio of the organic group 3B element compound to the organic zinc compound is in a range of 0.001 to 0.3. The process for production of the doped zinc oxide thin film to form the zinc oxide thin film with the doped group 3B element includes spray coating of the composition on a substrate surface under an atmospheric pressure or under an added pressure, under an atmosphere of water existence, and under a condition of substrate temperature of 300°C or less. COPYRIGHT: (C)2011,JPO&INPIT |
