无需利用附加遮罩来制造的积体有肖特基二极体的平面ＭＯＳＦＥＴ及其布局方法,申请号TW097132283-传众专利搜索

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发明名称	无需利用附加遮罩来制造的积体有肖特基二极体的平面ＭＯＳＦＥＴ及其布局方法
摘要
申请公布号	TWI441340	申请公布日期	2014.06.11
申请号	TW097132283	申请日期	2008.08.22
申请人	万国半导体股份有限公司美国	发明人	安荷　叭剌
分类号	H01L29/812;H01L21/338	主分类号	H01L29/812
代理机构		代理人	蔡清福台北市中山区中山北路3段27号13楼
主权项
地址	美国

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