High voltage cascoded III-nitride rectifier package comprising conductive clips between electrodes of components and the surface of a package support member

摘要

Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor (230) attached to a package support surface (260) and having an anode of a diode (220) stacked over a source of the III-nitride transistor, a first conductive clip (212b) coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip (212a) coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat (214b,214a) portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing.