| 摘要 |
A photogate electrode PG has a planar shape of a rectangular shape having first and second long sides LS1, LS2 opposed to each other and first and second short sides SS1, SS2 opposed to each other. First and second semiconductor regions FD1, FD2 are arranged opposite to each other with the photogate electrode PG in between in a direction in which the first and second long sides LS1, LS2 are opposed. Third semiconductor regions SR1 are arranged opposite to each other with the photogate electrode PG in between in a direction in which the first and second short sides SS1, SS2 are opposed. The third semiconductor regions SR1 make a potential on the sides of the first and second short sides SS1, SS2 higher than a potential in a region located between the first and second semiconductor regions FD1, FD2 in a region immediately below the photogate electrode PG. |
