THIN FILM TRANSISTOR SUBSTRATE FOR IN-PLANE SWITCHING DISPLAY HAIVING HIGH APERTURE RATIO AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to a thin film transistor substrate used for an in-plane switching display device having high-transmittance and a manufacturing method thereof. According to the present invention, the thin film transistor substrate includes a substrate; a gate wire and a data wire which interpose a gate insulation film therebetween and are crossed by each other to define a pixel area; a common wire which is arranged in parallel with the gate wire; a thin film transistor which includes a gate electrode branched from the gate wire, a source electrode branched from the data wire, and a drain electrode opposed to the source electrode; a first sub-capacity electrode extended from the drain electrode; a protection film which covers the thin film transistor and the first sub-capacity electrode; and a second sub-capacity electrode which interpose protection film between the first sub-capacity electrode and the second sub-capacity electrode, and is overlapped by the first sub-capacity electrode.