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发明名称
快闪式非挥发可抹除可程式唯读记忆体之临界电压调降方法及其结构
摘要
申请公布号
TWI441183
申请公布日期
2014.06.11
申请号
TW099130808
申请日期
2010.09.13
申请人
闪晶半导体股份有限公司 新竹市科学园区力行一路1号3楼B7室
发明人
王立中;黄瑞鸿
分类号
G11C16/02;H01L27/115
主分类号
G11C16/02
代理机构
代理人
叶信金 新竹市湳雅街311巷14号2楼
主权项
地址
新竹市科学园区力行一路1号3楼B7室
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