| 摘要 |
<p>A semiconductor device includes a transistor which is formed on a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode which is adjacent to the channel region. The gate electrode controls the conductivity of a channel which is formed in the channel region. The channel region and the drift zone are arranged along a first direction between the source region and the drain region. The first direction is parallel to the first main surface. The channel region has a shape of a first ridge which is extended along the first direction. The transistor includes a first electric field plate which is adjacent to the drift zone.</p> |
