| 摘要 |
<p>The present technique relates to a semiconductor device having a fuse. The semiconductor device comprises a semiconductor chip in which a cut fuse is formed on one surface, and a migration preventing module for preventing a migration phenomenon of a metal ion of the fuse to a cutting portion of the fuse. The migration preventing module includes: a ground electrode formed to face the fuse under the intervention of a first insulating member in the semiconductor chip; a floating electrode formed by interposing a second insulating member onto the fuse to face the fuse while sandwiching the ground electrode; and a power electrode formed by interposing a third insulating member onto the floating electrode.</p> |
