发明名称 Infrared thermal detector and method of manufacturing the same
摘要 According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal leg configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light.
申请公布号 EP2581721(A3) 申请公布日期 2014.06.11
申请号 EP20120187837 申请日期 2012.10.09
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 PARK, HAE-SEOK;NAM, SUNG-HYUN;SHIN, CHANG-GYUN;KIM, JUNG-WOO
分类号 G01J5/02;B82Y20/00;G01J5/08;G01J5/20 主分类号 G01J5/02
代理机构 代理人
主权项
地址