发明名称 |
Infrared thermal detector and method of manufacturing the same |
摘要 |
According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal leg configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light. |
申请公布号 |
EP2581721(A3) |
申请公布日期 |
2014.06.11 |
申请号 |
EP20120187837 |
申请日期 |
2012.10.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
PARK, HAE-SEOK;NAM, SUNG-HYUN;SHIN, CHANG-GYUN;KIM, JUNG-WOO |
分类号 |
G01J5/02;B82Y20/00;G01J5/08;G01J5/20 |
主分类号 |
G01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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