| 发明名称 |
β-Ga<sub>2</sub>O<sub>3 </sub>single crystal growing method including crystal growth method |
| 摘要 |
A method of growing a p-type thin film of β-Ga2O3 includes preparing a substrate including a β-Ga2O3 single crystal, and growing a p-type thin film of β-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb. |
| 申请公布号 |
US8747553(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213572976 |
申请日期 |
2012.08.13 |
| 申请人 |
Waseda University |
发明人 |
Ichinose Noboru;Shimamura Kiyoshi;Aoki Kazuo;Garcia Villora Encarnacion Antonia |
| 分类号 |
C30B25/00;C30B23/00 |
主分类号 |
C30B25/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of growing a p-type film of β-Ga2O3, said method comprising:
preparing a substrate comprising a β-Ga2O3 single crystal; and growing the p-type film of β-Ga2O3 on the substrate, the p-type film being grown by a crystal growth method including a vapor phase method in a manner that Ga in the film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.
|
| 地址 |
Tokyo JP |
