发明名称 |
Piezoelectric device |
摘要 |
A piezoelectric device prevents damage to a piezoelectric thin film caused by etching and the manufacturing cost of the piezoelectric device is reduced. On a surface of a support layer formed on a support substrate, an etching adjustment layer is formed. An etchant flows through etching windows to simultaneously form a through hole through which a portion of a sacrificial layer is exposed to a side of a piezoelectric thin film and an opening through which the etching adjustment layer, which is conductive with a lower electrode, is exposed to the side of the piezoelectric thin film. By making an etchant flow through the through hole, the sacrificial layer is removed. A lead-out wiring is formed between an upper electrode and a bump pad and a lead-out wiring is formed between the conductive etching adjustment layer, which is conductive with the lower electrode, and a bump pad. |
申请公布号 |
US8749119(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201213568157 |
申请日期 |
2012.08.07 |
申请人 |
Murata Manufacturing Co, Ltd. |
发明人 |
Araki Kiyoto |
分类号 |
H01L41/04;H03H9/02 |
主分类号 |
H01L41/04 |
代理机构 |
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代理人 |
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主权项 |
1. A piezoelectric device, comprising:
a piezoelectric thin film; a support member bonded to a rear surface of the piezoelectric thin film; a first electrode located on the rear surface of the piezoelectric thin film; a cavity located at a support member side of the first electrode between the piezoelectric thin film and the support member; a conductive etching adjustment layer arranged to adjust progress of etching, the etching adjustment layer being disposed on a piezoelectric thin film side of the support member, directly or so as to electrically connect through the first electrode; a through hole extending through the piezoelectric thin film and communicating with the cavity; and an opening portion through which the etching adjustment layer is exposed to a side of the piezoelectric thin film.
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地址 |
Kyoto JP |