| 发明名称 |
Light-emitting device, lighting device, and manufacturing method of light-emitting device |
| 摘要 |
The manufacturing method of the light-emitting device is provided in which an auxiliary electrode in contact with an electrode formed using a transparent conductive film of a light-emitting element is formed using a mask, and direct contact between the auxiliary electrode and an EL layer is prevented by oxidizing the auxiliary electrode. Further, the light-emitting device manufactured according to the method and the lighting device including the light-emitting device are provided. |
| 申请公布号 |
US8748930(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201113187688 |
申请日期 |
2011.07.21 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Ikeda Hisao;Yokoyama Kohei;Seo Satoshi |
| 分类号 |
H01L33/00;H01L51/52 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a light-emitting device, comprising the steps of:
forming a first electrode and a first pad, and a second pad which are over a substrate, the first electrode having a light-transmitting property, wherein the first electrode is formed between the first pad and the second pad; forming an auxiliary electrode over and in electrical contact with the first electrode; forming an EL layer over the first electrode and the auxiliary electrode; and forming a second electrode over the EL layer, the second electrode being electrically connected to the first pad and the second pad, wherein the auxiliary electrode is formed over and in electrical contact with the first pad and the second pad.
|
| 地址 |
JP |
