| 摘要 |
A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution. |
| 主权项 |
1. A residue-removing solution for removing residues after a dry process, comprising an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water,
the residue-removing solution being (A) or (B) described below: (A) an aqueous solution consisting of (1) a Brønsted acid whose pKa is at least 4.56 at 25° C., (2) an amine salt of a monocarboxylic acid, and/or (3) at least one member selected from the group consisting of an ammonium salt, an amine salt, and a quaternary ammonium salt of an aliphatic dicarboxylic acid that forms a 7- or more-membered ring chelate with copper, and (4) water, wherein the pH of the aqueous solution is equal to or less than the pKa of the monocarboxylic acid at 25° C.; is equal to or less than the pKa2 of the aliphatic dicarboxylic acid at 25° C.; or is equal to or less than the pKa of the monocarboxylic acid at 25° C. or pKa2 of the aliphatic dicarboxylic acid at 25° C., whichever is greater, when (2) and (3) coexist, the pH of the aqueous solution (A) is 4 to 6, and the Brønsted acid is a monocarboxylic acid and/or a polycarboxylic acid; (B) an aqueous solution consisting of (5) an amine salt of a C1-C8 monocarboxylic acid, and/or (6) an amine salt of an aliphatic dicarboxylic acid that forms a 7- or more-membered ring chelate with copper, and (7) water, wherein the pH of the aqueous solution is equal to or greater than the pKa of the C1-C8 monocarboxylic acid at 25° C.; is equal to or greater than the pKa2 of the aliphatic dicarboxylic acid at 25° C.; or is equal to or greater than the pKa of the C1-C8 monocarboxylic acid at 25° C. or pKa2 of the aliphatic dicarboxylic acid at 25° C., whichever is greater, when (5) and (6) coexist, and the pH of the aqueous solution (B) is 8 or less.
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