| 摘要 |
The present invention relates to a light emitting device, a manufacturing method of a light emitting device, a light emitting device package, and a lighting system. According to an embodiment of the present invention, the light emitting device includes: a first conductive type semiconductor layer (112); an active layer (114) on the first conductive type semiconductor layer (112); a second conductive type gallium nitride-based layer (128) on the active layer (114); and the second conductive type semiconductor layer (116) on the second conductive type gallium nitride-based layer (128). The second conductive type gallium nitride-based layer (128) may include, on the active layer, a second conductive type Al_xGa_(1-x)N/Al_yGa_(1-y)N superlattice layer (where, 0<x<1, 0<y<1). |
