| 发明名称 |
Apparatus for ROM cells |
| 摘要 |
A ROM cell comprises a first first-level contact formed on a first active region of a transistor of a memory cell, a first second-level contact formed on the first first-level contact, wherein the first second-level contact shifts in a first direction with reference to the first first-level contact. The ROM cell further comprises a second first-level contact formed on a second active region of the transistor of the memory cell, wherein the second first-level contact is aligned with the first first-level contact and a second second-level formed on the second first-level contact, wherein the second second-level contact shifts in a second direction with reference to the second first-level contact, and wherein the first direction is opposite to the second direction. |
| 申请公布号 |
US8750011(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213423968 |
申请日期 |
2012.03.19 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liaw Jhon-Jhy |
| 分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a first first-level contact formed on a first active region of a transistor of a memory cell; a first second-level contact formed on the first first-level contact, wherein the first second-level contact is offset in a first direction with reference to the first first-level contact; a second first-level contact formed on a second active region of the transistor of the memory cell, wherein the second first-level contact is aligned with the first first-level contact; and a second second-level formed on the second first-level contact, wherein the second second-level contact is offset in a second direction with reference to the second first-level contact, and wherein the first direction is opposite to the second direction.
|
| 地址 |
Hsin-Chu TW |
