| 发明名称 |
Sense amplifier control circuit and semiconductor memory device including the same |
| 摘要 |
A sense amplifier control circuit according to the present invention is disposed in a bit line sense amplifier (BLSA) array region including a plurality of BLSAs and is configured to supply a precharge voltage to the plurality of BLSAs in response to a control signal. |
| 申请公布号 |
US8750063(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213602258 |
申请日期 |
2012.09.03 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Choi Don Hyun |
| 分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A sense amplifier control circuit disposed in a bit line sense amplifier (BLSA) array region including a plurality of BLSAs and configured to supply a precharge voltage to the plurality of BLSAs in response to a control signal,
wherein the BLSA array region is disposed between a pair of cell array regions.
|
| 地址 |
Gyeonggi-do KR |
