Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof

摘要

A non-volatile memory device (and method of manufacture) is disclosed and structured to enable a write operation using an ionization impact process in a first portion of the device and a read operation using a tunneling process in a second portion of the device. The non-volatile memory device (1) increases hot carrier injection efficiency, (2) decreases power consumption, and (3) enables voltage and device scaling in the non-volatile memory devices.

主权项

1. A method of manufacturing a non-volatile memory device, the method comprising:
providing a substrate; forming a source region within the substrate, the source region comprising dopants of a first conductivity type; forming a drain region within the substrate, the drain region comprising dopants of a second conductivity type; forming a gate structure having at least a portion embedded in the substrate between the source region and the drain region, and wherein the gate structure comprises a tunnel oxide layer, a floating gate formed over the tunnel oxide layer and a control gate formed over the floating gate; forming an ionization impact region between the source region and the gate structure; and forming a halo region in the drain region at a location adjacent the gate structure, the halo region comprising dopants of the first conductivity type.