发明名称 Display device
摘要 A display panel of an organic EL display device includes a photo-detection section that detects reflected light when a screen is touched by a finger or the like. The photo-detection section includes a photodiode that receives the reflected light, and an output amplifier that outputs an output voltage corresponding to the amount of the received light. If an a-Si diode is used for such a photodiode, a sufficiently large signal difference between the bright state and the dark state can be achieved. Also, if a p-Si amplifier is used for the output amplifier, the output voltage becomes the saturation voltage at the time of read-out. This allows the p-Si amplifier to directly output the large difference detected by the a-Si diode as a large difference in the output voltage.
申请公布号 US8749528(B2) 申请公布日期 2014.06.10
申请号 US201013379783 申请日期 2010.02.26
申请人 Sharp Kabushiki Kaisha 发明人 Imai Hajime;Watanabe Takuya;Murai Atsuhito;Kitagawa Hideki
分类号 G06F3/042 主分类号 G06F3/042
代理机构 代理人
主权项 1. A display device that is capable of detecting a touch position, comprising: a display panel including a plurality of image display sections that display an image at a brightness corresponding to image data, and a plurality of photo-detection sections that generate a signal corresponding to an amount of received light; a display driver circuit that writes a signal corresponding to the image data in the image display sections; and a sensor driver circuit that reads the signal corresponding to the amount of the received light from the photo-detection sections, wherein each of the photo-detection sections includes a photodiode that generates electric charges corresponding to an incident light amount, a capacitor that accumulates the electric charges generated in the photodiode and that retains a voltage corresponding to the accumulated electric charge amount, and a thin film transistor that outputs an output signal based on the voltage retained by the capacitor, wherein the photodiode is made of a semiconductor film having a higher photosensitivity than that of a semiconductor film included in the thin film transistor, wherein the thin film transistor is made of a semiconductor film having a higher mobility than that of the semiconductor film included in the photodiode, wherein said display panel comprises a first substrate and a second substrate that are bonded to face each other, wherein the thin film transistor is formed on the first substrate and the photodiode is formed on the second substrate, wherein the thin film transistor and the photodiode are electrically connected by a conductive connecting member formed between the first substrate and the second substrate, wherein the connecting member comprises a columnar portion made of an insulating material and a first conductive film formed on a surface of the columnar portion, and wherein the columnar portion maintains a predetermined spacing between the first substrate and the second substrate by its height.
地址 Osaka JP