发明名称 |
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE |
摘要 |
<p>An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.</p> |
申请公布号 |
KR20140070663(A) |
申请公布日期 |
2014.06.10 |
申请号 |
KR20147012515 |
申请日期 |
2012.10.11 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
PALACIOS TOMAS APOSTOL;LU BIN;MATIOLI ELISON DE NAZARETH |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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