Semiconductor-on-insulator integrated circuit with interconnect below the insulator

摘要

An integrated circuit fabricated on a semiconductor-on-insulator transferred layer is described. The integrated circuit includes an interconnect layer fabricated on the back side of the insulator. This interconnect layer connects active devices to each other through holes etched in the insulator. This structure provides extra layout flexibility and lower capacitance, thus enabling higher speed and lower cost integrated circuits.

主权项

1. A method of forming an integrated circuit assembly, the method comprising:
providing a semiconductor-on-insulator including:
an insulating layer having a first surface and a second surface;a semiconductor layer having a first surface and a second surface, wherein the first surface of the semiconductor layer contacts the first surface of the insulating layer; anda substrate layer contacting the second surface of the insulating layer; forming transistors in the semiconductor layer; coupling the second surface of the semiconductor layer to a handle layer; removing the substrate layer; forming a hole in the insulator layer, wherein the hole in the insulator layer extends from the second surface to the first surface of the insulator layer and exposes the first surface of the semiconductor layer; and forming a metal interconnect layer on the second surface of the insulator layer, wherein the metal interconnect layer is disposed within the hole in the insulating layer, and wherein the metal interconnect layer electrically couples a plurality of the transistors to each other.