| 发明名称 |
Acoustic wave device and method for manufacturing the same |
| 摘要 |
An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion. |
| 申请公布号 |
US8749320(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213398104 |
申请日期 |
2012.02.16 |
| 申请人 |
Taiyo Yuden Co., Ltd. |
发明人 |
Nishihara Tokihiro;Taniguchi Shinji;Yokoyama Tsuyoshi;Ueda Masanori |
| 分类号 |
H03H9/54;H03H9/15;H03H9/17;H03H9/13;H03H9/60;H03H9/58;H03H3/04 |
主分类号 |
H03H9/54 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An acoustic wave device comprising a piezoelectric thin-film resonator including:
a substrate; a piezoelectric thin-film on the substrate; a lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface, at least one of the lower electrode and the upper electrode including layers; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the layers of the at least one of the lower electrode and the upper electrode, the first addition film having a shape different from that of the resonance portion.
|
| 地址 |
Tokyo JP |
