| 发明名称 |
Methods of forming strained-semiconductor-on-insulator device structures |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. |
| 申请公布号 |
US8748292(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US20050073780 |
申请日期 |
2005.03.07 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Langdo Thomas A.;Currie Matthew T.;Hammond Richard;Lochtefeld Anthony J.;Fitzgerald Eugene A. |
| 分类号 |
H01L21/30;H01L29/06;H01L21/762;H01L29/786;H01L29/66;H01L27/12;H01L29/78;H01L21/84;H01L21/02 |
主分类号 |
H01L21/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a structure, the method comprising:
providing a first substrate having only one compressively strained semiconductor layer formed thereon; bonding the compressively strained semiconductor layer directly to an insulator layer disposed on a second substrate; and removing the first substrate from the compressively strained semiconductor layer, the compressively strained semiconductor layer remaining bonded to the insulator layer.
|
| 地址 |
Hsin-Chu TW |
