Method for manufacturing semiconductor device

摘要

A through portion is formed on a semiconductor substrate. Into the semiconductor substrate, a first ion implantation is performed via the through portion. The through portion is at least partially removed in the thickness direction from a region of at least a portion of the through portion when viewed in a plan view. A second ion implantation is performed into the semiconductor substrate at the region of at least the portion thereof. An implantation energy for the first ion implantation is equal to an implantation energy for the second ion implantation.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a film on a semiconductor substrate; performing a first ion implantation into said semiconductor substrate through said film; at least partially removing said film; and performing a second ion implantation into said semiconductor substrate through said film after at least partially removing said film, an implantation energy for said first ion implantation being equal to an implantation energy for said second ion implantation.