发明名称 |
Semiconductor devices and methods of manufacture thereof |
摘要 |
Capacitor plates, capacitors, semiconductor devices, and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes at least one via and at least one conductive member coupled to the at least one via. The at least one conductive member comprises an enlarged region proximate the at least one via. |
申请公布号 |
US8748257(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201113100770 |
申请日期 |
2011.05.04 |
申请人 |
Infineon Technologies AG |
发明人 |
Kim Sun-Oo |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a capacitor, the method comprising:
forming at least one first conductive material layer over a workpiece, the at least one first conductive material layer including a first insulating material and at least one via disposed within the first insulating material; and forming at least one second conductive material layer adjacent the at least one first conductive material layer, the at least one second conductive material layer including a second insulating material and at least one conductive member disposed within the second insulating material, the at least one conductive member being coupled to the at least one via, wherein forming the at least one second conductive material layer comprises forming at least one conductive member comprising an enlarged region proximate the at least one via, and wherein forming the at least one first conductive material layer and forming the at least one second conductive material layer comprise forming an at least one conductive member and at least one via that comprise at least one capacitor plate.
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地址 |
Neubiberg DE |