Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices

摘要

A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate having first and second regions; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer includes a first trench on the first region of the substrate and a second trench on the second region of the substrate; forming a gate dielectric layer on a surface of the interlayer dielectric layer, on side and bottom surfaces of the first trench, and on side and bottom surfaces of the second trench; forming an etch stop dielectric layer on the gate dielectric layer, wherein the gate dielectric layer and the etch stop dielectric layer comprise different materials; forming a metal layer on the etch stop dielectric layer filling the first and second trenches; and removing the metal layer in the first region including the first trench using the etch stop dielectric layer as an etch stop.