| 摘要 |
Producing polycrystalline silicon, comprises introducing reaction gases comprising a silicon-containing component and hydrogen into reactors to deposit silicon, where a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in the second reactor. An independent claim is included for granular polycrystalline silicon comprising = 30 parts per billion atoms (ppba) of carbon and >= 5 parts per million weight (ppmw) of chlorine. |
