发明名称 |
System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
摘要 |
A method for reading at least one page within an erase sector of a flash memory device, the method comprising computing at least one mock reading threshold; using the at least one mock reading threshold to perform at least one mock read operation of at least a portion of at least one page within the erase sector, thereby to generate a plurality of logical values; defining a set of reading thresholds based at least partly on the plurality of logical values; and reading at least one page in the erase sector using the set of reading thresholds. |
申请公布号 |
US8751726(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US20080596438 |
申请日期 |
2008.09.17 |
申请人 |
Densbits Technologies Ltd. |
发明人 |
Katz Michael |
分类号 |
G06F12/00 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for reading at least one page within an erase sector of a flash memory device, the method comprising: computing at least one mock reading threshold; wherein the mock threshold that is far from an adequate conventional reading threshold useful for reconstructing a logical value from a physical value residing in a flash memory cell; using said at least one mock reading threshold to perform at least one mock read operation of at least a portion of at least one page within said erase sector, thereby to generate a plurality of logical values; defining a set of reading thresholds based at least partly on said plurality of logical values; and reading at least one page in said erase sector using said set of reading thresholds.
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地址 |
Haifa IL |