发明名称 |
Method of manufacturing a semiconductor device including a dielectric structure |
摘要 |
A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner. |
申请公布号 |
US8748317(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201213566192 |
申请日期 |
2012.08.03 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Schmidt Gerhard;Schloegl Daniel;Hartl Marcella Johanna;Koch Philipp Sebastian;Strasser Roland |
分类号 |
H01L21/302;H01L21/3105;H01L21/321;H01L21/02;H01L21/304;B24B37/04 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising
providing a cavity extending from a working surface into a substrate; providing a dielectric layer on the working surface, the dielectric layer including a dielectric polymer and filling the cavity; partially curing the dielectric layer; removing a portion of the partially cured dielectric layer using a chemical mechanical polishing process; and further curing remnant portions of the dielectric layer to form a dielectric structure.
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地址 |
Villach AT |