发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 <p>The present technique relates to a semiconductor device and a method for forming the same. The semiconductor device of the present technique comprises: a semiconductor structure in which an opening for exposing a pad on one surface is formed; a first conductive layer for flattening the one surface of the semiconductor structure by being formed on the opening; and a conductive pattern printed on a portion of the one surface of the semiconductor structure including the first conductive layer.</p>
申请公布号 KR20140069544(A) 申请公布日期 2014.06.10
申请号 KR20120136907 申请日期 2012.11.29
申请人 SK HYNIX INC. 发明人 KIM, JONG HOON;BAE, PIL SOON
分类号 H01L21/60;H01L21/28;H01L23/488 主分类号 H01L21/60
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