THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME

摘要

The present invention relates to a thin film transistor substrate and a display device using the same including: a gate electrode which is formed on a substrate; a gate insulation film which is formed on the gate electrode; an active layer which is formed on the gate insulation film; a source electrode and a drain electrode which are connected with the active layer and are formed to face each other; a protective film which is formed on the source electrode and the drain electrode; a light shielding layer which blocks light from entering the active layer. The light shielding layer includes: a first light shielding layer which is formed to be overlapped with the active layer on a protective film; a second light shielding layer which faces the first lateral side of the active layer by being formed inside a first hole which is included in the protective film; and a third light shielding layer which faces the second lateral side of the active layer by being formed inside a second hole which is installed in the protective film. The present invention blocks light from entering the upper side of the active layer by forming the first light shielding layer on the protective film on the active layer and blocks light from entering the lateral side of the active layer by forming the second light shielding layer and a third light shielding layer in order to respectively face the first and second lateral sides of the active layer.