Magnetic memory element and driving method for same

摘要

A magnetic memory element and a method of driving such an element are disclosed. The magnetic memory element has a magnetic tunnel junction portion with a spin-valve structure having a perpendicular magnetization free layer formed of a perpendicular magnetization film, a perpendicular magnetization pinned layer formed of a perpendicular magnetization film, and a nonmagnetic layer sandwiched between the perpendicular magnetization free layer and the perpendicular magnetization pinned layer, and records information by application of an electric pulse to the magnetic tunnel junction portion. An in-plane magnetization film, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion. The in-plane magnetization film is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion.

主权项

1. A magnetic memory element, comprising:
a magnetic tunnel junction portion having a spin-valve structure, the spin-valve structure having a free layer formed of a perpendicular magnetization film; a pinned layer formed of a perpendicular magnetization film; and a nonmagnetic layer disposed between the free layer and the pinned layer, which is configured to record information by application of an electric pulse to the magnetic tunnel junction portion; and an in-plane magnetization film that is disposed in the magnetic tunnel junction portion and is interposed in a path of the electric pulse; wherein the in-plane magnetization film is configured to transition between an antiferromagnetic phase and a ferromagnetic phase based on a temperature change; and wherein the temperature change is based on an application of the electric pulse to the magnetic tunnel junction portion.