POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device. The disclosed power semiconductor device includes a power semiconductor element formed on a lower structure and has a structure, where the lower electrode of the power semiconductor element is electrically connected to a solder layer, and a structure where an upper electrode is electrically connected to a wire through a pad layer. This power semiconductor device reduces process costs and realizes process integration by massive production in a wafer level.