发明名称 Memory modules and memory devices having memory device stacks, and method of forming same
摘要 A memory module, system and method of forming the same includes a memory module including a plurality of memory devices having a first portion of memory devices cooperatively forming a first rank of memory devices and a second portion of memory devices cooperatively forming a second rank of memory devices. The first and second portions of memory devices are grouped into a plurality of memory device stacks, wherein each of the plurality of memory device stacks includes at least one of the plurality of memory devices coupled to a first portion of a plurality of DQ signals and at least another one of the plurality of memory devices coupled to a different second portion of the plurality of DQ signals.
申请公布号 US8750010(B2) 申请公布日期 2014.06.10
申请号 US201213532239 申请日期 2012.06.25
申请人 Micron Technology, Inc. 发明人 Hofstra Joseph
分类号 G11C5/02 主分类号 G11C5/02
代理机构 代理人
主权项 1. A memory, comprising: at least one stack of memory devices, including: a first memory device operably coupled to a first plurality of DQ signals; and a second memory device in a stacked arrangement with the first memory device, the second memory device operably coupled to a second plurality of DQ signals; and a controller operably coupled to the at least one stack of memory devices through the first plurality of DQ signals and the second plurality of DQ signals, wherein the first plurality of DQ signals are different from the second plurality of DQ signals.
地址 Boise ID US