发明名称 Experience count dependent program algorithm for flash memory
摘要 In a non-volatile memory device, the parameters used in write and erase operation are varied based upon device age. For example, in a programming operation using a staircase waveform, the amplitude of the initial pulse can be adjusted based upon the number of erase-program cycles (hot count) of the block containing the selected physical page for the write. This arrangement can preserve performance for relatively fresh devices, while extending life as a devices ages by using gentler waveforms as the device ages.
申请公布号 US8750045(B2) 申请公布日期 2014.06.10
申请号 US201213560896 申请日期 2012.07.27
申请人 SanDisk Technologies Inc. 发明人 Huang Jianmin;Tanpairoj Kulachet;Avila Chris Nga Yee;Dusija Gautam Ashok
分类号 G11C16/06;G11C16/10 主分类号 G11C16/06
代理机构 代理人
主权项 1. A method of providing one or more non-volatile memory circuits, comprising: manufacturing multiple non-volatile memory chips according to the same design; for each of a plurality of the memory chips, individually characterizing the voltage waveforms produced by the memory chip for a state changing operation on memory cells of the memory chip; for each of the plurality of the memory chips, individually trimming the voltage waveforms based upon the corresponding individual characterizations; using a set of one or more, but less than all, of the manufactured memory chips, determining an amount of variation in device characteristics for said state changing operation for a plurality of distinct age ranges, the plurality of age ranges including a first range, that includes when the memory chips of the set are fresh, and one or more second ranges; based on the amount of variation in device characteristics, determining an offset for one or more values for parameters for the state changing operation for each of the one or more second ranges relative to the first range; and storing the one or more offsets on each of the plurality of non-volatile memory chips.
地址 Plano TX US