Display device, method for manufacturing display device, and SOI substrate

摘要

A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size).

主权项

1. A method for manufacturing a display device, comprising the steps of:
forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate; implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively; bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween; exposing a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer each selected from the plurality of single-crystalline semiconductor layers at a time, wherein each of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer has an area including one panel; and patterning the first single-crystalline semiconductor layer and the second singel-crystalline semiconductor layer to form a first display portion over the second substrate by using a patterned first single-crystalline semiconductor layer and a second display portion over the second substrate by using a patterned second single-crystalline semiconductor layer, wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas.