发明名称 |
Test structures, methods of manufacturing thereof, test methods, and MRAM arrays |
摘要 |
Test structures, methods of manufacturing thereof, test methods, and magnetic random access memory (MRAM) arrays are disclosed. In one embodiment, a test structure is disclosed. The test structure includes an MRAM cell having a magnetic tunnel junction (MTJ) and a transistor coupled to the MTJ. The test structure includes a test node coupled between the MTJ and the transistor, and a contact pad coupled to the test node. |
申请公布号 |
US8750031(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201113328953 |
申请日期 |
2011.12.16 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kao Ya-Chen;Chiang Tien-Wei;Lin Chun-Jung |
分类号 |
G11C11/14;H01L23/58;G11C29/00;H01L21/66;G11C11/16;H01L23/544;H01L43/12 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. A test structure comprising:
a magnetic random access memory (MRAM) cell including a magnetic tunnel junction (MTJ) and a transistor coupled to the MTJ; a test node coupled between the MTJ and the transistor; and a contact pad coupled to the test node.
|
地址 |
Hsin-Chu TW |