| 发明名称 |
Insulated gate bipolar transistor with high breakdown voltage |
| 摘要 |
A semiconductor device includes a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, on the front of the semiconductor layer; a second semiconductor layer of the second conductor type, on the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer; a third semiconductor layer of the second conductor type, on the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer; a first semiconductor region of the first conductor type, in a surface layer of the third semiconductor layer; a second semiconductor region of the second conductor type, in a surface layer of the first semiconductor region; an input electrode contacting the second semiconductor region; a control electrode disposed above part of the first semiconductor region with an insulating film therebetween; and an output electrode disposed on the back of the semiconductor layer. |
| 申请公布号 |
US8748937(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213651973 |
申请日期 |
2012.10.15 |
| 申请人 |
Fuji Electric Co., Ltd.;Yoshitaka Sugawara |
发明人 |
Sugawara Yoshitaka;Takahashi Nobuyuki |
| 分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, formed on the front side of the semiconductor layer; a second semiconductor layer of the second conductor type, formed on the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer; a third semiconductor layer of the second conductor type, formed on the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer; a first semiconductor region of the first conductor type, selectively formed in a surface layer of the third semiconductor layer; a second semiconductor region of the second conductor type, selectively formed in a surface layer of the first semiconductor region; an input electrode that contacts the second semiconductor region; a control electrode that is disposed above part of the first semiconductor region with an insulating film therebetween, the part being sandwiched by the second semiconductor region and the third semiconductor layer; and an output electrode that is disposed on the back side of the semiconductor layer.
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| 地址 |
Kawasaki-shi JP |
