| 发明名称 |
Methods and structures for electrostatic discharge protection |
| 摘要 |
A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first conductivity type and a second region of the second conductivity type are disposed within the second well region. A third region of the first conductivity type and a fourth region of the second conductivity type are disposed within the first well region, wherein the third region and the fourth region are separated by the second well region. The semiconductor device also includes a switch device coupled to the third region. |
| 申请公布号 |
US8748936(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213555075 |
申请日期 |
2012.07.20 |
| 申请人 |
Macronix International Co., Ltd. |
发明人 |
Wang Shih-Yu;Lu Chia-Ling;Chen Yan-Yu;Liu Yu-Lien;Lu Tao-Cheng |
| 分类号 |
H01L29/73 |
主分类号 |
H01L29/73 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a first well region of a first conductivity type; a second well region of a second conductive type within the first well region; a first region of the first conductivity type within the second well region; a second region of the second conductivity type within the second well region; a third region of the first conductivity type within the first w ell region; a fourth region of the second conductivity type within the first well region, wherein the third region and the fourth region are separated by the second well region; and a switch device coupled to the third region, the switch device not directly coupled to the fourth region.
|
| 地址 |
Hsinchu TW |
