| 摘要 |
The present invention relates to a target for oxide semiconductor sputtering, a thin film transistor having an active layer, and a display device and, more specifically, to a target for oxide semiconductor sputtering, a thin film transistor having an active layer, and a display device having high electron mobility and reliability. The present invention provides the target for the oxide semiconductor sputtering which is used for a sputtering process for depositing the active layer of the thin film transistor, the thin film transistor having the active layer, and the display device. The target comprises a material based on an In, Sn, Ga, and O composition. |
