Unipolar spin-transfer switching memory unit

摘要

A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

主权项

1. A method comprising:
switching a magnetic tunnel junction data cell from a high resistance state to a low resistance state by passing a first forward bias voltage pulse having a first polarity through a diode and the magnetic tunnel junction data cell; and switching the magnetic tunnel junction data cell from the low resistance state to the high resistance state by passing a second forward bias voltage pulse having the first polarity through the diode and the magnetic tunnel junction data cell.