Semiconductor device and method of manufacturing the same

摘要

A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.

主权项

1. A method of manufacturing a semiconductor device, comprising:
stacking, over a semiconductor substrate, an insulating interlayer and a first insulating film in this order; selectively removing said first insulating film and said insulating interlayer in this order, to thereby form a hole as being extended through said first insulating film and said insulating interlayer; allowing side-etching of an inner wall of said hole to proceed specifically in a portion of said insulating interlayer, to thereby form a structure having said first insulating film projected out from the edge towards the center of said hole; forming a lower electrode film as being extended over the top surface, side face and back surface of said first insulating film, and over the inner wall and bottom surface of said hole; filling a protective film in said hole; removing said lower electrode film specifically in portions fallen on the top surface and side face of said first insulating film; removing said protective film; stacking, in said hole and over said lower electrode film, a capacitor insulating film and an upper electrode in this order; patterning said first insulating film, said capacitor insulating film and said upper electrode so as to align an end surface of said first insulating film with an end surface of said capacitor insulating film and with an end surface of said upper electrode; and forming a fourth insulating film on said insulating interlayer and said upper electrode so as to contact with said end surface of said first insulating film, said end surface of said capacitor insulating film and said end surface of said upper electrode.