Methods of fabricating fin structures

摘要

There is provided fin methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins.

主权项

1. A method comprising:
forming a plurality of parallel walls on top of a substrate; forming spacers on each side of each of the plurality of walls; forming a trench in the substrate between each of the plurality of walls, such that the spacers define the top of each trench; filling each trench with a dielectric material; removing the walls and a portion of the substrate below the walls, such that channels are formed between the spacers and into the substrate; and etching the dielectric material in each trench to approximately the same depth as the channels.